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BUK652R1-30C,127

BUK652R1-30C,127

BUK652R1-30C,127

NXP USA Inc.

MOSFET N-CH 30V 120A TO220AB

non-compliant

BUK652R1-30C,127 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.96000 $0.96
500 $0.9504 $475.2
1000 $0.9408 $940.8
1500 $0.9312 $1396.8
2000 $0.9216 $1843.2
2500 $0.912 $2280
5004 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 168 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 10918 pF @ 25 V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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