Welcome to ichome.com!

logo
Home

SI4162DY-T1-GE3

SI4162DY-T1-GE3

SI4162DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 19.3A 8SO

non-compliant

SI4162DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.40680 -
5,000 $0.38040 -
12,500 $0.36720 -
25,000 $0.36000 -
10000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1155 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STB200N6F3
SISH112DN-T1-GE3
STW58N60DM2AG
FDMS86200DC
FDMS86200DC
$0 $/piece
STF22N60DM6
NTMYS2D2N06CLTWG
NTMYS2D2N06CLTWG
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.