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SISH112DN-T1-GE3

SISH112DN-T1-GE3

SISH112DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 11.3A PPAK

non-compliant

SISH112DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.70520 -
6,000 $0.67209 -
15,000 $0.64844 -
91 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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