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IPD85P04P4L06ATMA1

IPD85P04P4L06ATMA1

IPD85P04P4L06ATMA1

MOSFET P-CH 40V 85A TO252-3

non-compliant

IPD85P04P4L06ATMA1 Pricing & Ordering

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Name Value
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 25 V
FET Feature -
Power Dissipation (Max) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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