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IPB60R160C6ATMA1

IPB60R160C6ATMA1

IPB60R160C6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

non-compliant

IPB60R160C6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.95334 -
2,000 $1.85567 -
5,000 $1.78591 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 100 V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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