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IXTQ86N20T

IXTQ86N20T

IXTQ86N20T

IXYS

MOSFET N-CH 200V 86A TO3P

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IXTQ86N20T Pricing & Ordering

Quantity Unit Price Ext. Price
30 $3.80267 $114.0801
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
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