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SI3474DV-T1-GE3

SI3474DV-T1-GE3

SI3474DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 3.8A 6TSOP

compliant

SI3474DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17310 -
6,000 $0.16255 -
15,000 $0.15200 -
30,000 $0.14462 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 126mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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