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FQD7N20LTM

FQD7N20LTM

FQD7N20LTM

POWER FIELD-EFFECT TRANSISTOR, 5

compliant

FQD7N20LTM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.33212 -
5,000 $0.31043 -
12,500 $0.29959 -
25,000 $0.29368 -
2045 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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