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BUK9E4R4-80E,127

BUK9E4R4-80E,127

BUK9E4R4-80E,127

NXP USA Inc.

MOSFET N-CH 80V 120A I2PAK

non-compliant

BUK9E4R4-80E,127 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.25000 $1.25
500 $1.2375 $618.75
1000 $1.225 $1225
1500 $1.2125 $1818.75
2000 $1.2 $2400
2500 $1.1875 $2968.75
295 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 123 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17130 pF @ 25 V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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