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SI3440DV-T1-GE3

SI3440DV-T1-GE3

SI3440DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 150V 1.2A 6TSOP

non-compliant

SI3440DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.65420 -
6,000 $0.62348 -
15,000 $0.60154 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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