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SQD40061EL_GE3

SQD40061EL_GE3

SQD40061EL_GE3

Vishay Siliconix

MOSFET P-CH 40V 100A TO252AA

non-compliant

SQD40061EL_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.66528 -
6,000 $0.63202 -
10,000 $0.60826 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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