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FDMC86262P

FDMC86262P

FDMC86262P

onsemi

MOSFET P-CH 150V 2A/8.4A 8MLP

non-compliant

FDMC86262P Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.49403 -
6,000 $0.46933 -
15,000 $0.45169 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta), 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 307mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 885 pF @ 75 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN
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