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TK560A65Y,S4X

TK560A65Y,S4X

TK560A65Y,S4X

MOSFET N-CH 650V 7A TO220SIS

non-compliant

TK560A65Y,S4X Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.40000 $1.4
50 $1.12000 $56
100 $0.98000 $98
500 $0.76000 $380
1,000 $0.60000 -
2,500 $0.56000 -
12 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 560mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
FET Feature -
Power Dissipation (Max) 30W
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
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