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SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK1212-8

non-compliant

SIS427EDN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.30510 -
6,000 $0.28530 -
15,000 $0.27540 -
30,000 $0.27000 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1930 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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