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IXTP05N100M

IXTP05N100M

IXTP05N100M

IXYS

MOSFET N-CH 1000V 700MA TO220AB

SOT-23

non-compliant

IXTP05N100M Pricing & Ordering

Quantity Unit Price Ext. Price
50 $2.25000 $112.5
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 700mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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