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TJ60S06M3L(T6L1,NQ

TJ60S06M3L(T6L1,NQ

TJ60S06M3L(T6L1,NQ

MOSFET P-CH 60V 60A DPAK

non-compliant

TJ60S06M3L(T6L1,NQ Pricing & Ordering

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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 11.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 7760 pF @ 10 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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