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SIB452DK-T1-GE3

SIB452DK-T1-GE3

SIB452DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 190V 1.5A PPAK SC75

compliant

SIB452DK-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33900 -
6,000 $0.31700 -
15,000 $0.30600 -
30,000 $0.30000 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
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