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FDS6680S

FDS6680S

FDS6680S

MOSFET N-CH 30V 11.5A 8SOIC

compliant

FDS6680S Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.48000 $0.48
500 $0.4752 $237.6
1000 $0.4704 $470.4
1500 $0.4656 $698.4
2000 $0.4608 $921.6
2500 $0.456 $1140
42578 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2010 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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