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TSM900N06CW RPG

TSM900N06CW RPG

TSM900N06CW RPG

MOSFET N-CHANNEL 60V 11A SOT223

non-compliant

TSM900N06CW RPG Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.15050 -
5,000 $0.14080 -
12,500 $0.13594 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 4.17W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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