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PJD50N10AL-AU_L2_000A1

PJD50N10AL-AU_L2_000A1

PJD50N10AL-AU_L2_000A1

100V N-CHANNEL ENHANCEMENT MODE

compliant

PJD50N10AL-AU_L2_000A1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.06000 $1.06
500 $1.0494 $524.7
1000 $1.0388 $1038.8
1500 $1.0282 $1542.3
2000 $1.0176 $2035.2
2500 $1.007 $2517.5
1968 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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