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FDMA86108LZ

FDMA86108LZ

FDMA86108LZ

onsemi

MOSFET N-CH 100V 2.2A 6MICROFET

compliant

FDMA86108LZ Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.39652 -
6,000 $0.36917 -
15,000 $0.35550 -
17845 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 243mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 163 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad
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