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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 750 V |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
Vgs (Max) | +21V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
FET Feature | - |
Power Dissipation (Max) | 176W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
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