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SIHB21N60EF-GE3

SIHB21N60EF-GE3

SIHB21N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 21A TO263AB

non-compliant

SIHB21N60EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.78000 $4.78
10 $4.28600 $42.86
100 $3.54190 $354.19
500 $2.89670 $1448.35
1,000 $2.46656 -
3,000 $2.35075 -
378 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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