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IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

MOSFET N-CH 650V 4.2A THIN-PAK

non-compliant

IPL65R1K0C6SATMA1 Pricing & Ordering

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5,000 $0.57437 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V
FET Feature -
Power Dissipation (Max) 34.7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-2
Package / Case 8-PowerTDFN
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