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STB28N65M2

STB28N65M2

STB28N65M2

STMicroelectronics

MOSFET N-CH 650V 20A D2PAK

non-compliant

STB28N65M2 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.62792 -
2,000 $1.52760 -
5,000 $1.47744 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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