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RM2A8N60S4

RM2A8N60S4

RM2A8N60S4

Rectron USA

MOSFET N-CH 60V 2.8A SOT223-3

non-compliant

RM2A8N60S4 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.11000 $0.11
500 $0.1089 $54.45
1000 $0.1078 $107.8
1500 $0.1067 $160.05
2000 $0.1056 $211.2
2500 $0.1045 $261.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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