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DMT10H025LSS-13

DMT10H025LSS-13

DMT10H025LSS-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

non-compliant

DMT10H025LSS-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.28263 $0.28263
500 $0.2798037 $139.90185
1000 $0.2769774 $276.9774
1500 $0.2741511 $411.22665
2000 $0.2713248 $542.6496
2500 $0.2684985 $671.24625
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 12.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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