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DMT10H025LSS-13

DMT10H025LSS-13

DMT10H025LSS-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

compliant

DMT10H025LSS-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.28263 $0.28263
500 $0.2798037 $139.90185
1000 $0.2769774 $276.9774
1500 $0.2741511 $411.22665
2000 $0.2713248 $542.6496
2500 $0.2684985 $671.24625
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 12.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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