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FDMS4D0N12C

FDMS4D0N12C

FDMS4D0N12C

onsemi

MOSFET N-CH 120V 18.5A/114A 8QFN

non-compliant

FDMS4D0N12C Pricing & Ordering

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3,000 $3.15467 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 370A
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6460 pF @ 60 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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