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FDMS4D0N12C

FDMS4D0N12C

FDMS4D0N12C

onsemi

MOSFET N-CH 120V 18.5A/114A 8QFN

compliant

FDMS4D0N12C Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $3.15467 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 370A
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6460 pF @ 60 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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