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RM11N800T2

RM11N800T2

RM11N800T2

Rectron USA

MOSFET N-CH 800V 11A TO220-3

non-compliant

RM11N800T2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.44000 $1.44
500 $1.4256 $712.8
1000 $1.4112 $1411.2
1500 $1.3968 $2095.2
2000 $1.3824 $2764.8
2500 $1.368 $3420
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 50 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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