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IPB026N06NATMA1

IPB026N06NATMA1

IPB026N06NATMA1

MOSFET N-CH 60V 25A/100A D2PAK

non-compliant

IPB026N06NATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.35575 -
2,000 $1.26225 -
5,000 $1.21550 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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