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SPD04P10PLGBTMA1

SPD04P10PLGBTMA1

SPD04P10PLGBTMA1

MOSFET P-CH 100V 4.2A TO252-3

non-compliant

SPD04P10PLGBTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.32793 -
5,000 $0.30532 -
12,500 $0.29401 -
25,000 $0.28784 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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