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NTD4909N-1G

NTD4909N-1G

NTD4909N-1G

onsemi

MOSFET N-CH 30V 8.8A/41A IPAK

non-compliant

NTD4909N-1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.18000 $0.18
500 $0.1782 $89.1
1000 $0.1764 $176.4
1500 $0.1746 $261.9
2000 $0.1728 $345.6
2500 $0.171 $427.5
6000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1314 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.37W (Ta), 29.4W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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