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PJD10N10_L2_00001

PJD10N10_L2_00001

PJD10N10_L2_00001

100V N-CHANNEL MOSFET

non-compliant

PJD10N10_L2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.66000 $0.66
500 $0.6534 $326.7
1000 $0.6468 $646.8
1500 $0.6402 $960.3
2000 $0.6336 $1267.2
2500 $0.627 $1567.5
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta), 34.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 34.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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