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IXTY2N65X2

IXTY2N65X2

IXTY2N65X2

IXYS

MOSFET N-CH 650V 2A TO252

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IXTY2N65X2 Pricing & Ordering

Quantity Unit Price Ext. Price
70 $1.28800 $90.16
11 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
FET Feature -
Power Dissipation (Max) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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