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FDMS4D4N08C

FDMS4D4N08C

FDMS4D4N08C

onsemi

MOSFET N-CH 80V 123A 8PQFN

compliant

FDMS4D4N08C Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.48846 -
2236 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4090 pF @ 40 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6), Power56
Package / Case 8-PowerTDFN
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