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FDR836P

FDR836P

FDR836P

P-CHANNEL MOSFET

compliant

FDR836P Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.83000 $0.83
500 $0.8217 $410.85
1000 $0.8134 $813.4
1500 $0.8051 $1207.65
2000 $0.7968 $1593.6
2500 $0.7885 $1971.25
15000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-8
Package / Case 8-LSOP (0.130", 3.30mm Width)
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