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IPDQ60R010S7XTMA1

IPDQ60R010S7XTMA1

IPDQ60R010S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

compliant

IPDQ60R010S7XTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $36.44000 $36.44
500 $36.0756 $18037.8
1000 $35.7112 $35711.2
1500 $35.3468 $53020.2
2000 $34.9824 $69964.8
2500 $34.618 $86545
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 10mOhm @ 50A, 12V
Vgs(th) (Max) @ Id 4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs 318 nC @ 12 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11987 pF @ 300 V
FET Feature -
Power Dissipation (Max) 694W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22-1
Package / Case 22-PowerBSOP Module
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