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PMV30UN2VL

PMV30UN2VL

PMV30UN2VL

Nexperia USA Inc.

MOSFET N-CH 20V 5.4A TO236AB

non-compliant

PMV30UN2VL Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 655 pF @ 10 V
FET Feature -
Power Dissipation (Max) 490mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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