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SISH402DN-T1-GE3

SISH402DN-T1-GE3

SISH402DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 19A/35A PPAK

non-compliant

SISH402DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.44723 -
6,000 $0.42623 -
15,000 $0.41123 -
2 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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