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IPP50R299CPXKSA1

IPP50R299CPXKSA1

IPP50R299CPXKSA1

MOSFET N-CH 550V 12A TO220-3

non-compliant

IPP50R299CPXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.50000 $2.5
10 $2.25900 $22.59
100 $1.81490 $181.49
500 $1.41160 $705.8
1,000 $1.16961 -
33582 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 100 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
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