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LND01K1-G

LND01K1-G

LND01K1-G

MOSFET N-CH 9V 330MA SOT23-5

SOT-23

non-compliant

LND01K1-G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33166 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 9 V
Current - Continuous Drain (Id) @ 25°C 330mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 100mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +0.6V, -12V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 5 V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -25°C ~ 125°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-5
Package / Case SC-74A, SOT-753
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