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IRFW630BTM-FP001

IRFW630BTM-FP001

IRFW630BTM-FP001

onsemi

MOSFET N-CH 200V 9A D2PAK

non-compliant

IRFW630BTM-FP001 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $0.55833 $446.664
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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