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FQD2N80TM

FQD2N80TM

FQD2N80TM

onsemi

MOSFET N-CH 800V 1.8A DPAK

SOT-23

non-compliant

FQD2N80TM Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.28000 $1.28
500 $1.2672 $633.6
1000 $1.2544 $1254.4
1500 $1.2416 $1862.4
2000 $1.2288 $2457.6
2500 $1.216 $3040
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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