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IXTH3N200P3HV

IXTH3N200P3HV

IXTH3N200P3HV

IXYS

MOSFET N-CH 2000V 3A TO247

non-compliant

IXTH3N200P3HV Pricing & Ordering

Quantity Unit Price Ext. Price
1 $21.74000 $21.74
30 $18.47900 $554.37
120 $17.17458 $2060.9496
510 $15.21800 $7761.18
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 25 V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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