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SIHP11N80E-GE3

SIHP11N80E-GE3

SIHP11N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 12A TO220AB

compliant

SIHP11N80E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.91000 $3.91
10 $3.49000 $34.9
100 $2.86160 $286.16
500 $2.31720 $1158.6
1,000 $1.95426 -
3,000 $1.85655 -
5,000 $1.78675 -
18 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 100 V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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