Welcome to ichome.com!

logo
Home

EPC2010C

EPC2010C

EPC2010C

EPC

GANFET N-CH 200V 22A DIE OUTLINE

compliant

EPC2010C Pricing & Ordering

Quantity Unit Price Ext. Price
500 $3.73500 $1867.5
1,000 $3.15000 -
8299 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 100 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (7-Solder Bar)
Package / Case Die
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IXTA1N120P
IXTA1N120P
$0 $/piece
IXFA6N120P
IXFA6N120P
$0 $/piece
NTTFS4928NTWG
NTTFS4928NTWG
$0 $/piece
2SK4099LS
2SK4099LS
$0 $/piece
SISA04DN-T1-GE3
STD64N4F6AG
FDB4020P
NTP095N65S3H
NTP095N65S3H
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.