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IXFY4N60P3

IXFY4N60P3

IXFY4N60P3

IXYS

MOSFET N-CH 600V 4A TO252

non-compliant

IXFY4N60P3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.61000 $1.61
70 $1.30000 $91
140 $1.17000 $163.8
560 $0.91000 $509.6
1,050 $0.75400 -
2,520 $0.72800 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 365 pF @ 25 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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