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IPB085N06L G

IPB085N06L G

IPB085N06L G

MOSFET N-CH 60V 80A TO-263

non-compliant

IPB085N06L G Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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