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IPB085N06L G

IPB085N06L G

IPB085N06L G

MOSFET N-CH 60V 80A TO-263

compliant

IPB085N06L G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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