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IPD50R280CEATMA1

IPD50R280CEATMA1

IPD50R280CEATMA1

MOSFET N-CH 500V 13A TO252-3

compliant

IPD50R280CEATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.57400 -
5,000 $0.54530 -
12,500 $0.52480 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 32.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 773 pF @ 100 V
FET Feature -
Power Dissipation (Max) 119W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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