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IXFN82N60Q3

IXFN82N60Q3

IXFN82N60Q3

IXYS

MOSFET N-CH 600V 66A SOT227B

non-compliant

IXFN82N60Q3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $43.16000 $43.16
10 $40.36100 $403.61
100 $34.99500 $3499.5
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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